FETs - meaning and definition. What is FETs
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What (who) is FETs - definition


Llibre dels fets         
  • crusade of 1269]]
  • 1313 Latin translation of the ''Llibre dels Fets'', the ''Cronice Illustrissimi Regis Aragonum'' by Friar [[Pere Marsili]] following the order of James II of Aragon (grandson of James I of Aragon).
  • Dominican friar]] [[Pere Marsili]], by order of James II of Aragon, grandson of [[James I of Aragon]], called "the Conqueror".
  • 1619 Frontispiece of Catalan manuscript made by Jaume Ferrera
  • 1619 Catalan copy from Jaume Ferrera of the Poblet Monastery's manuscript. This faithful depiction is the second and last of the book, and has disappeared in the other copies.
  • 1343 Catalan manuscript Prologue
  • 1380 Catalan manuscript first page: "...says My Lord Saint James that faith without actions, is dead. This word he wanted to accomplish, Lord, in our deeds..."
  • 1380 Catalan copy contains two illustrations, both of friars; this first one depicts Dominican Friar Miguel Fabra i Berenguer de Castellbisbal.
BOOK
Libre dels feyts; Crònica de Jaume I
The (; from Catalan: "Book of Deeds"; Old Catalan: ) is the autobiographical chronicle of the reign of James I of Aragon (1213–1276). It is written in Old Catalan in the first person and is the first chronologically of the four works classified as The Four Great Catalan Chronicles, all belonging to the early medieval Crown of Aragon (in the northeastern part of what is now Spain), and its first royal dynasty, the House of Barcelona.
https://en.wikipedia.org/wiki/Llibre_dels_fets
Fet         
  • FET conventional symbol types
  • Insulator}} Top: source, bottom: drain, left: gate, right: bulk. Voltages that lead to channel formation are not shown.
  • I–V characteristics and output plot of a JFET n-channel transistor.
  • [[Julius Edgar Lilienfeld]] proposed the concept of a field-effect transistor in 1925.
  • Cross section of an n-type MOSFET
  • Simulation result for right side: formation of inversion channel (electron density) and left side: current-gate voltage curve (transfer characteristics) in an n-channel [[nanowire]] [[MOSFET]]. Note that the [[threshold voltage]] for this device lies around 0.45 V.
TRANSISTOR THAT USES AN ELECTRIC FIELD TO CONTROL ITS ELECTRICAL BEHAVIOUR
Field-effect transistors; Field-Effect Transistor; Field Effect Transistor; Depletion mode transistor; Depletion-mode transistor; FREDFET; Gate (transistor); Field effect transistor; Field effect transistors; Unipolar transistor; Unipolar transistors; Transistor channel; Channel (transistors); Drain (transistor); Source (transistor); Substrate (transistor); Bulk (transistor); FET (transistor); Body (transistor); Channel (transistor); FET; Depletion Mode Transistor; Fast-reverse epitaxial diode field-effect transistor; Fast-recovery epitaxial diode field-effect transistor; Channel (semiconductor); Gate electrode; P-channel; N-channel; Gate (FET); Drain (FET); Source (FET)
·noun A Piece.
II. Fet ·p.p. Fetched.
III. Fet ·vt To Fetch.
IV. Fet ·p.p. of Fette.
FET         
  • FET conventional symbol types
  • Insulator}} Top: source, bottom: drain, left: gate, right: bulk. Voltages that lead to channel formation are not shown.
  • I–V characteristics and output plot of a JFET n-channel transistor.
  • [[Julius Edgar Lilienfeld]] proposed the concept of a field-effect transistor in 1925.
  • Cross section of an n-type MOSFET
  • Simulation result for right side: formation of inversion channel (electron density) and left side: current-gate voltage curve (transfer characteristics) in an n-channel [[nanowire]] [[MOSFET]]. Note that the [[threshold voltage]] for this device lies around 0.45 V.
TRANSISTOR THAT USES AN ELECTRIC FIELD TO CONTROL ITS ELECTRICAL BEHAVIOUR
Field-effect transistors; Field-Effect Transistor; Field Effect Transistor; Depletion mode transistor; Depletion-mode transistor; FREDFET; Gate (transistor); Field effect transistor; Field effect transistors; Unipolar transistor; Unipolar transistors; Transistor channel; Channel (transistors); Drain (transistor); Source (transistor); Substrate (transistor); Bulk (transistor); FET (transistor); Body (transistor); Channel (transistor); FET; Depletion Mode Transistor; Fast-reverse epitaxial diode field-effect transistor; Fast-recovery epitaxial diode field-effect transistor; Channel (semiconductor); Gate electrode; P-channel; N-channel; Gate (FET); Drain (FET); Source (FET)
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